Both DRAM and NAND pricing rose strongly in Q2, with NAND outpacing DRAM. Sequential volume growth was seen in both categories, though NAND grew less than DRAM. The company expects pricing to remain ...
Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.
Tech Xplore on MSN
Key transistor for next-generation 3D stacked semiconductors operates without current leakage
A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors ...
Researchers at UCLA have discovered a way to dramatically improve how electrical current enters perovskite semiconductors, an ...
A team of international researchers have developed a breakthrough way to observe what is happening inside electronic chips while they are operating—without touching them, taking them apart, or ...
Morning Overview on MSN
Researchers report fix for nanoscale bottleneck in next-gen electronics
Three separate research teams have reported techniques that directly attack one of the hardest problems in shrinking transistors and wiring below 10 nanometers: the sharp rise in electrical resistance ...
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